5 f o 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 0 5 0 0 s d 8 0 r jan 19, 2 0 1 2 preliminary data sheet NX6342EP l aser d iod e 1 310 nm algainas mqw-dfb laser diode for 10 gb/s base-l r /lw application des cript ion t h e nx6342e p is a 1 3 1 0 n m m u l t i p le quan t u m w ell (mqw) stru ctured d i s t r ibu t ed f e ed-b a c k ( d f b ) l aser d i ode w ith i n g a as m onito r p in- p d . applications ? 10 g b / s b a se -l r/ l w (i e e e 8 02 .3a e ) fea t ure s ? o p tical o u tpu t p o wer p o = 8.5 m w ? l o w t h res hol d cur r ent i th = 8 m a ? diffe re ntial efficiency d = 0.23 w /a ? w i de operating tem p erature range t c = ? 5 to + 8 5 c ? i n g a as m onitor p in- p d ? c a n p ac k a g e 5.6 mm ? f ocal poi n t 6 . 0 m m r08 d s0 050e j01 00 rev.1.00 jan 1 9, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
NX6342EP chapter title r08ds0050ej0100 rev.1.00 page 2 of 5 jan 19, 2012 package dimensions (unit: mm) pin connection bottom view 1.00.1 15.01.0 1.20.1 3.870.3 6.00.4 110 2 (0.3) *2 (0.3) *2 x = 200 m max. y = 200 m max. 2.0 4? 0.45 ( 4.2) *2 ( 3.55) *2 2.0 *1 focal point: a point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension . ( 5.6) *2 (3.0) *2 focal point *1 reference plane 1 2 3 4 1 2 3 4 ld pd a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NX6342EP chapter title r08ds0050ej0100 rev.1.00 page 3 of 5 jan 19, 2012 ordering information part number package pin connections NX6342EP $ = 4-pin can with ball lens cap 1 2 3 4 ld pd remarks 1. the color of ball lens cap might be observed differently. 2. the hermetic test will be performed as aql 1.0%. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NX6342EP chapter title r08ds0050ej0100 rev.1.00 page 4 of 5 jan 19, 2012 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit optical output power p o 15 mw forward current of ld i f 120 ma reverse voltage of ld v r 2.0 v forward current of pd i f 10.0 ma reverse voltage of pd v r 15 v operating case temperature t c ? 5 to +85 c storage temperature t stg ? 40 to +95 c lead soldering temperature t sld 350 (3 sec.) c relative humidity (noncondensing) rh 85 % recommended ld drive current at module level parameter symbol conditions min. typ. max. unit bias current i bias t c = 25 c ? 30 ? ma electro-optical characteristics (t c = ? 5 to +85 c, cw, bol, unless otherwise specified) parameter symbol conditions min. typ. max. unit signalling rate ? 10.3125 ? gb/s optical output power p o ? 8.5 ? mw operating voltage v op p o = 8.5 mw ? ? 2.0 v threshold current i th t c = 25 c ? 8 15 ma ? ? 30 differential efficiency d p o = 8.5 mw, t c = 25 c 0.23 ? ? w/a p o = 8.5 mw 0.13 ? ? peak emission wavelength p p o = 8.5 mw 1 290 ? 1 330 nm side mode suppression ratio smsr p o = 8.5 mw 35 ? ? db rise time t r 20-80% *1 ? ? 50 ps fall time t f 80-20% *1 ? ? 50 ps monitor current i m v r = 1.5 v, p o = 8.5 mw 100 ? 1 000 a monitor dark current i d v r = 3.3 v, t c = 25 c ? ? 10 na v r = 3.3 v ? ? 100 monitor pd terminal capacitance c t v r = 3.3 v, f = 1 mhz ? ? 20 pf tracking error *2 i m = const. (@p o = 8.5 mw, t c = 25 c) ? 0.9 ? 0.9 db note: 1. 10.3125 gb/s, prbs 2 31 ? 1, nrz, duty cycle = 50% 2. tracking error: 0 i m i m t c = 25c t c = ?5 to +85c p o (mw) p o 8.5 (ma) = 10 log [db] p o 8.5 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NX6342EP chapter title r08ds0050ej0100 rev.1.00 page 5 of 5 jan 19, 2012 safety information on this product danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser warning laser beam a laser beam is emitted from this diode during operation. the laser beam, visible or in visible, directly or indi rectly, may cause injury to the eye or loss of eyesight. ? do not look directly into the laser beam. ? avoid exposure to the laser beam, any reflected or collimated beam. caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, tran sport and dispose of materials that contain arsenic and ot her such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history NX6342EP data sheet description rev. date page summary 1.00 jan 19, 2012 ? first edition issued
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